FIELD: physics.
SUBSTANCE: invention relates to an amorphous oxide, used in the active layer of a field-effect transistor. The amorphous oxide, which contains at least one microcrystal and has concentration of electron carriers from 1012/cm3 to 1018/cm3, contains at least one element, chosen from a group consisting of In, Zn and Sn, and the boundary surface of the grains of the said microcrystal is coated with an amorphous structure.
EFFECT: obtaining an amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.
6 cl, 8 dwg
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