FIELD-EFFECT TRANSISTOR MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: method of making a field-effect transistor, comprising a layer of a first oxide and a layer of a second oxide and forming a front channel or a back channel in a region, where the first oxide layer and the second oxide layer adhere to each other, wherein the method includes forming a layer of a second precursor, which is a second oxide layer precursor, such that it is in contact with a first precursor layer which is a precursor of the first oxide layer, and then converting the first precursor layer and the second precursor layer into the first oxide layer and the second oxide layer, respectively, wherein formation includes both treatment (I) and treatment (II) given below, namely (I) by treatment by applying a coating liquid which forms a precursor of a first oxide which can form a precursor of a first oxide and contains a solvent, and then removing the solvent to form a layer of a first precursor which is a precursor of the layer of the first oxide, and (II) processing by applying a coating liquid which forms a precursor of a second oxide which can form a precursor of a second oxide and contains a solvent, and then removal of solvent to form layer of second precursor, which is a precursor of second oxide layer, as well as simultaneous performance of heat treatment for conversion of layers of first and second precursors into layers of first and second oxides.

EFFECT: invention improves the characteristics of the transistor.

8 cl, 7 dwg