METHOD FOR LEAD-FREE CONTACT-REACTION SOLDERING SEMICONDUCTOR CHIPS TO HOUSING Russian patent published in 2010 - IPC H01L21/52 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to making semiconductor articles and can be used when assembling silicon chips in semiconductor device housing through lead-free soldering. The method for lead-free contact-reactive soldering a semiconductor crystal to a housing involves depositing aluminium and tin on the soldered surface of the chip and the housing respectively, and placing a zinc folder between the chip and the housing and soldering to the base of the housing. The novelty of the method lies in that, aluminium metal coating is deposited at the base of the housing and soldering is done in a protective atmosphere at 419-440°C.

EFFECT: avoiding formation of lead during soldering, reduced production costs, simple assembling technique, reduced labour input into manufacturing, higher temperature of heating semiconductor devices during use.

2 dwg