LOGICAL COMPARISON ELEMENT OF COMPLIMENTARY METAL-OXIDE-SEMICONDUCTOR STRUCTURE OF ASSOCIATE SELECTOR OF MEMORY DEVICE Russian patent published in 2017 - IPC G06F7/04 G11C15/04 

Abstract RU 2621011 C1

FIELD: physics.

SUBSTANCE: device contains two inverters with a third state, a data write port, a trigger consisting of two groups of transistors, each of which includes two pairs of P"МОП" and N"МОП" transistors.

EFFECT: increasing the noise immunity of a logical element under the influence of single nuclear particles.

5 cl, 4 dwg, 5 tbl

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RU 2 621 011 C1

Authors

Stenin Vladimir Yakovlevich

Antonyuk Artem Vladimirovich

Dates

2017-05-30Published

2016-05-25Filed