METHOD OF CHIP FABRICATION Russian patent published in 2010 - IPC H05K3/12 

FIELD: metallurgy.

SUBSTANCE: invention refers to electronic engineering, particularly to process of chip fabrication on metal bedding and can be implemented at radio and electronic productions. The method consists in plasma sputtering an under layer out of powder of inter metallic composition of nickel with aluminium of dimension of particles 20-70 mcm; further the method consists in spraying a layer of ceramic out of powder of aluminium oxide with silica-alumina glass, in applying borosilicate glass, whereupon surface of ceramic layer is subject to impregnation with glass, and in glasing. Forming metallised pattern of a chip is performed by the fine film process, where a minimal dimension of element is 10 mcm.

EFFECT: improved thermal resistance of multi-layer structure, elimination of cracks and chipping-off ceramic layer from metal bedding, reduced porosity of ceramic layer and upgraded reliability of chip operation.

8 cl, 1 dwg, 2 tbl