METHOD OF TREATING QUARTZ EQUIPMENT FOR SEMICONDUCTOR PRODUCTION Russian patent published in 2010 - IPC H01L21/306 

FIELD: chemistry.

SUBSTANCE: in the method of treating quartz equipment for semiconductor production, involving treatment of quartz equipment after high-temperature operations of semiconductor production in a cleaning solution, the quartz equipment is treated with a cleaning solution which consists of hydrofluoric acid, ammonium fluoride, sulphomaleic anhydride and deionised water, with the following weight ratio of components 0.5:1:1:1 respectively. The quartz equipment is treated in two stages, the first at 30°C for 20-30 minutes, and the second in a fresh solution with the same weight ratio of components at room temperature for 10-20 minutes, after which the quartz equipment is treated with deionised water at room temperature for 30-60 minutes.

EFFECT: complete removal of different types of contaminations from the surface of quartz equipment, simple implementation of the method, reduced toxicity of the process.

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