METHOD FOR TREATMENT OF SINGLE-CRYSTALLINE SILICON WAFER SURFACE Russian patent published in 2008 - IPC H01L21/306 

FIELD: semiconductor engineering; chemical treatment of single-crystalline silicon wafer surfaces chemically resistant to open air and suited to growing epitaxial semiconductor films.

SUBSTANCE: proposed method for treatment of single-crystalline silicon wafer surface positioned on Si(100) or Si(111) plane includes cleaning of mentioned surface followed by passivation with hydrogen atoms. Silicon surface is first cleaned twice by means of boiling trichloroethylene solution for 10-20 minutes involving washing with deionized water and then with ammonium-peroxide aqueous solution of following composition: 5 volumes of H₂O, 1 volume of 30% H₂O₂, 1 volume of 25% NH₄OH at 75-82 °C or with salt-peroxide aqueous solution of following composition: 6 volumes of H₂O, 1 volume of 30% H₂O₂, 1 volume of 37% HCl at 75-82 °C, followed by three 5- or 10-minute steps of washing with deionized water; passivation with hydrogen atoms is conducted by treatment first with 5-10 mass percent HF solution and then with aqueous solution of NH₄OH and NH₄F mixture at pH = 7.6-7.7 for 40-60 s followed by washing with deionized water and drying out under normal conditions.

EFFECT: ability of producing wafers capable of retaining their serviceability for long time in storage and in transit, in open air, without oxidizing their surfaces.

1 cl, 3 dwg