FIELD: chemistry.
SUBSTANCE: invention relates to a method of producing epitaxial films of an ultra-wide-bandgap gallium oxide semiconductor (Ga2O3) at high temperatures of the substrate. Method of producing epitaxial gallium oxide films includes depositing a gallium oxide film on a sapphire substrate by high-frequency magnetron sputtering, wherein before the gallium oxide film deposition, a tantalum film is applied on the back (reverse) side of the substrate, providing a high temperature of the substrate of up to 1000-1300 °C due to absorption of radiation from heater, wherein sapphire substrate is located in zone of magnetron plasma for activation of crystallisation processes at atomic level.
EFFECT: invention enables formation of epitaxial Ga2O3 films by high-frequency magnetron sputtering with improved crystalline structure and optical properties.
1 cl, 7 dwg
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