FIELD: growth of monocrystals.
SUBSTANCE: when nitride monocrystal is grown, at first the silicon base is prepared, which has surface with crystallographic orientation (111), the first nitride buffer layer is formed on it, on which amorphous oxide film is created, then the second nitride buffer layer is formed on amorphous oxide film is formed, and nitride monocrystal is formed on the second nitride buffer layer. Also light emitting device is given and method of its manufacturing.
EFFECT: new method of monocrystals growth.
23 cl, 1 ex, 7 dwg
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