METHOD FOR PRODUCTION OF EPITAXIAL FILMS OF (SiC)(AlN) SOLID SOLUTION Russian patent published in 2013 - IPC C30B23/02 C23C14/35 C30B29/10 

FIELD: electrical engineering.

SUBSTANCE: epitaxial films of (SiC)_1-x(AlN)_x solid solution where the x is more than 0 but less than 1, are produced by way of sedimenting a solid solution onto a monocrystal SiC-6H substrate at a temperature of 1000°C by way of magnetron ion plasma sputtering performed in an atmosphere of argon and nitrogen from a composite target representing a polycrystal silicon carbide disc the rear surface whereof is coated with a layer of chemically pure aluminium. Concentration of Si, C, Al atoms in sedimented films is regulated by way of measuring the area of the aluminium layer on the target surface while nitrogen concentration is regulated by way of changing the ratio of nitrogen pressure to overall pressure inside the sputtering chamber.

EFFECT: production technology simplification, produced films perfection and possibility to produce films of aide-zone solid solution within the whole compositions interval.

3 dwg, 1 ex