METHOD FOR MANUFACTURING OF TUNNEL SENSOR OF MECHANICAL OSCILLATIONS Russian patent published in 2010 - IPC B81C3/00 

FIELD: microstructure technologies.

SUBSTANCE: invention relates to the field of microelectronic and micromechanical devices manufacturing technologies and may be used in manufacturing of sensors that function in the basis of tunnel effect and providing for transformation "displacement - electric signal". The invention concept is as follows: on dielectric or semiconductor substrate with dielectric layer a system of metallisation is formed, which consists of lower electrode of electrostatic control system, contact sites, system of electric isolation. Then a "sacrificial" technological layer is applied onto produced structure, and a hole is formed in it serially for support of cantilever, as well as a cone-shaped hole for tunnel electrode. A layer of photosensitive composite material is applied from polymer matrix with filler in the form of electroconductive powders of nanoparticles. Lithography and thermal treatment of composite material layer is carried out to produce hole cone top partially filled with composite material for tunnel electrode. Then a cantilever is formed, as well as inertial mass, and "sacrificial" layer is removed with partial etching of polymer matrix of composite material to free surface of nanoparticles, forming tunnel electrode.

EFFECT: improved reproducibility and manufacturability of item.

7 cl, 1 dwg, 1 ex