FIELD: chemistry.
SUBSTANCE: invention can be used to obtain highly pure silicon. The method involves chemical etching and high-temperature treatment of the surface of silicon while stirring particles of the powdered silicon at 800 - 1410° C and feeding silicon particles into a gas stream which is chemically active towards impurities and silicon. In another version a layer of porous silicon is formed on the surface of powdered silicon particles first.
EFFECT: invention shortens the purification process and consumption of chemically active gas.
8 cl, 3 ex
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