PROCEDURE FOR GROWING BICRYSTALS OF TRANSITION METALS Russian patent published in 2010 - IPC C30B13/22 C30B13/34 C30B29/02 

FIELD: metallurgy.

SUBSTANCE: procedure for growing bi-crystals of transition metals with electron-beam zone melting implementing bi-crystal seed with known orientation of boundary growth consists in placement of treated mono-crystal of metal and seed into vacuum cooled melting chamber by means of holder. Seed is welded to the base of the holder. Treated mono-crystal is arranged on seed and welded to it. There is applied difference of potentials between a source of electrons and treated mono-crystal of metal. To create uniform zone of melting there is determined operational value of filament current. Mono-crystal of metal is treated by zone re-melting applying electron beam to a region of contact between seed and treated mono-crystal, simultaneously rotating grown bi-crystal around axis passing through the holder. The source of electrons is transferred along whole height of treated mono-crystal. Also growth is carried out on seed of 5-10 mm height.

EFFECT: producing bi-crystals of transition metals with inter-granular boundaries passing along whole height of bi-crystals, upgraded structure quality and increased output of accepted bi-crystals.

3 ex, 2 dwg