METHOD OF ELECTRON-BEAM ZONE MELTING OF METAL AND DEVICE FOR REALIZATION OF THIS METHOD Russian patent published in 2006 - IPC C22B9/22 C30B13/22 C30B13/32 

FIELD: metallurgy of ferrous and non-ferrous metals; growing of monocrystals and vacuum refining of various materials by means of electron-beam zone melting.

SUBSTANCE: proposed method consists in application to electron source of difference of potentials between electron source and holder of metal being treated followed by acting on it with electron current, adjusting of electron current power through change of difference of potentials between electron source and holder of metal being treated and setting of filament current voltage for forming maximum smoothness of melting zone. Metal being treated and seed crystal are placed in cooled vacuum melting chamber and seed crystal at known orientation of growth axis is welded to holder base. Metal being treated is placed on it and is subjected to cleaning by zone re-melting in vacuum. Crystal is grown at simultaneous rotation of it about its axis running through holders and electron source is moved along crystal being grown over entire length of metal being treated till monocrystal of preset crystallographic parameters has been obtained. Device proposed for realization of this method includes electron-beam gun with high-voltage supply source and circular electron source performing function of cathode, cooled focusing elements, body made from high-heat-conducting material and holder of metal being treated which performs function of anode; this holder is located in melting chamber where mechanism for rotation of metal being treated, mechanism for motion of electron source and circular heat shields are arranged.

EFFECT: enhanced efficiency of growing monocrystals at preset geometric and crystallographic parameters.

3 cl, 2 dwg, 1 ex