NANOTECHNOLOGICAL COMPLEX BASED ON EPITAXIAL AND ION TECHNOLOGIES Russian patent published in 2010 - IPC H01L21/20 H01J37/26 B82B1/00 

Abstract RU 2390070 C2

FIELD: physics.

SUBSTANCE: nanotechnological complex based on epitaxial and ion technologies includes a loading chamber, a molecular beam epitaxy module, an ion implantation module, a transportation system with a holder, substrate carriers, pumping apparatus and a substrate turning unit. The transportation system is made in form of a standalone distribution chamber with a pumping unit and connection flanges in which there is a central distributor robot with possibility of axial rotation, as well as with possibility of interaction of at least one holder of the substrate carrier with the loading chamber, molecular beam epitaxy module and ion implantation module, docked through connection flanges with the distribution chamber.

EFFECT: broader functional capabilities of the nanotechnological complex.

1 dwg

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RU 2 390 070 C2

Authors

Bykov Viktor Aleksandrovich

Dates

2010-05-20Published

2007-11-12Filed