MATERIAL FOR PHOTOCONDUCTIVE ANTENNAS Russian patent published in 2017 - IPC H01L31/304 

FIELD: physics, photography.

SUBSTANCE: invention can be used to create the active layer in photoconductive detecting antennas and terahertz electromagnetic radiation generators. According to the invention, material for photoconductive antennas is a film of GaAs, epitaxially grown on the GaAs substrate with crystallographic orientation (111)A at lowered growth temperature, the doped by silicon atoms, the arsenic and gallium flows ratio during epitaxial growth is chosen such that the majority of silicon atoms was the acceptor impurity.

EFFECT: invention provides the proposed semiconductor photoconductive material with an ultrashort lifetime of photoexcited carriers, and can be obtained by a simplified technological process of epitaxial growth.