MANUFACTURING METHOD OF MICROWAVE TRANSISTOR WITH CONTROL ELECTRODE OF T-SHAPED CONFIGURATION OF SUBMICRON LENGTH Russian patent published in 2010 - IPC H01L21/335 

FIELD: electricity.

SUBSTANCE: manufacturing method of microwave transistor with control electrode of T-shaped configuration of submicron length involves formation on the front side of semi-insulating semi-conductor plate with active layer of the specified structure of a pair of electrodes of transistor, which form ohmic contacts by means of lithographic, etching method and method of sputtering of metal or system of metals, formation of transistor channel by means of electronic lithography and etching, application of masking dielectric layer, formation in masking dielectric layer of submicron slot by means of electronic lithography and etching; at that, submicron slot is formed with variable cross section decreasing as to height from wide upper part adjacent to the head of the above control electrode to narrow lower part adjacent to transistor channel, formation of topology of the above control electrode by means of electronic lithography method, formation of the above control electrode in submicron slot by means of sputtering of metal or system of metals; at that, configuration of its base repeats configuration of submicron slot. During formation of submicron slot with variable cross section in masking dielectric layer, which decreases throughout its height, by means of electronic lithography and etching, the latter of masking dielectric layer is performed in one common production process in high-frequency plasma of hexafluoride of sulphur, oxygen and helium and discharge power of 8-10 W.

EFFECT: increasing output power and amplification factor, increasing reproducibility of the above output parametres and therefore yield ratio, simplifying and decreasing labour input for manufacturing process.

2 cl, 1 dwg, 1 tbl, 5 ex