HIGH-PERFORMANCE UHF FIELD TRANSISTOR WITH SCHOTTKY BARRIER Russian patent published in 2010 - IPC H01L29/812 

FIELD: electricity.

SUBSTANCE: high-performance UHF field transistor with Schottky barrier includes semi-insulating gallium arsenide substrate with active layer, rake out of at least one alternating sequence of single source, gate and drain electrodes. Semi-insulating gallium arsenide areas are positioned between single source and drain electrode couples, and channels with grooves carrying single gate electrodes are made inside single source and drain electrode couples. Single gate electrodes are positioned asymmetrically towards single source electrodes, same-name single source, gate and drain electrodes are connected electrically. According to invention, field transistor with Schottky barrier includes additionally 0.15-0.25 mcm thick dielectric layer of low inductive capacity in the channel of each single source and drain electrode couple at single drain electrode side, and each single gate electrode is long at top and short at bottom adjoining channel groove surface, compared to the side surface of single drain electrode, with different cross-section size towards single source electrode. Cross-section size of long top part exceeds cross-section size of short bottom part by 0.5-0.8 mcm, with height of the latter equal to additional dielectric layer thickness. At one side, two additional dielectric layer surfaces mutually perpendicular against layer depth adjoin directly vertical surface of short bottom part and larger horizontal surface of long top part of single gate electrode respectively along the electrode width, and at the opposite side the same surfaces are positioned either at one level with the edge of long top part of single gate electrode or overlap single source electrode channel not more than for 4 mcm from that edge.

EFFECT: increased output power, power amplification coefficient and efficiency.

4 cl, 2 dwg, 1 tbl, 7 ex