PRODUCTION METHOD OF SUPER-HIGH FREQUENCY (SHF) FIELD-EFFECT TRANSISTOR WITH SCHOTTKI BARRIER Russian patent published in 2009 - IPC H01L21/338 

FIELD: electric engineering.

SUBSTANCE: invention relates to electronic engineering. According to the invention, the production method of SHF field-effect transistor with Schottki barrier provides for manufacturing, at least, one pair of source electrode and drain electrode, ensuring grooved channel between the above electrodes where Schottki barrier-type gate electrode is installed with an offset to the source side. The SHF field-effect transistor is implemented on a semi-insulating substrate made from semi-conducting material of A^IIIB^V group with active layer. The metal or metal system forming Schottki barrier in the area of gate is sprayed at an angle to the front surface of semi-insulating substrate to the side of source. The angle is equal to 102-112°. In addition, the above-specified angle in each source-drain electrode pair in the point of gate adjoining the source electrode exceeds the similar angle adjoining the drain electrode by 24-44° and at the same time, it is perpendicular to the channel width. So, the distance between front surface of semi-insulating substrate and source of sprayed metal is equal to 400-700 mm.

EFFECT: increased output power of super-high frequency and, accordingly, efficiency factor, increased power amplification factor and reduced noise factor.

1 dwg, 1 tbl