PRESSURE SENSOR Russian patent published in 2010 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: invention relates to pressure sensors including a semi-conductor sensing element based on the silicon-on-sapphire structure manufactured in accordance with the planar microelectronic technology. The pressure sensor contains a housing, an elastic suspension hermetically fixed between the housing and the cover, the suspension represented by a corrugated membrane on the surface thereof conductor paths, contact pads and output contacts are arranged, a cover hermetically connected to the housing, a semi-conductor elastic sensing element with resistive-strain sensors and contact pads. The semi-conductor elastic sensing element is manufactured in accordance with the planar microelectronic technology. The elastic sensing element is rigidly connected to a ceramic bowl with high temperature solder-glass to form a cavity between them. The elastic sensing element is rigidly connected to the membrane along the contour, its contact pads solder-connected to the membrane contact pads.

EFFECT: enhanced structural reliability of the pressure sensor in terms of resistance to mechanical impacts, reduction of additional error resulting from mounting and thermomechanical tensions and reduction of the pressure sensor fabrication labour intensity.

2 dwg