SENSOR OF ABSOLUTE PRESSURE OF HIGH ACCURACY BASED ON SEMICONDUCTING SENSITIVE ELEMENT WITH RIGID CENTRE Russian patent published in 2014 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: sensor of absolute pressure comprises a body with a nozzle, a sealing contact block, a metal membrane, a non-compressible liquid, a semiconducting sensitive element comprising a glass base and a square profiled semiconducting crystal, in the centre of the thin part of which there is a stiff centre of square shape, on the working part of the semiconducting crystal there is a bridge measurement circuit formed of four strain resistance gauges. The size of the stiff centre is determined based on the following ratio: $$l_{s.c.}>{}^{h_{s.c.}}/{}_{\mathrm{1,432}}.$$ Centres of some strain resistance gauges included into opposite arms of the bridge measurement circuit and perceiving relative positive deformations are located at the distance from the centre of the crystal determined on the basis of the following ratio: $$R_1=\frac{L_{tp}}{2}\cdot r_1\left(L_{tp},l_{sc}\right)=\frac{L_{tp}}{2}\cdot \sum _{i=0}^2{k}_i{\left(\frac{l_{sc}}{L_{tp}}\right)}^i.$$ Centres of other strain resistance gauges included into opposite arms of the bridge measurement circuit and perceiving relative negative deformations are located at the distance from the centre of the crystal determined on the basis of the following ratio: $$R_2=\frac{L_{tp}}{2}\cdot r_2\left(L_{tp},l_{sc}\right)=\frac{L_{tp}}{2}\cdot \sum _{i=0}^2{l}_i{\left(\frac{l_{sc}}{L_{tp}}\right)}^i.$$

EFFECT: higher accuracy of measurement.

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