FIELD: microelectronics.
SUBSTANCE: invention relates to the field of special technological equipment of microelectronics. The essence of the invention: the method is based on the creation of a special configuration of a magnetic field in the wall area of the reactor vacuum chamber, the lines of force of which have the shape of arches united in annular arched zones formed near the cylindrical wall of the reactor from the side of the vacuum volume. The zones are arranged sequentially along the forming cylindrical wall of the reactor, the number of such annular zones and the length of the arches control the setting of plasma parameters in the plate processing area. In this case, the magnetic field is concentrated near the reactor wall and does not penetrate into the area where the processed plate is located. To implement this method, a device is installed on the outside of the cylindrical vacuum chamber of the reactor, made of a diamagnetic material, which is a system of permanent magnets in the form of rings, the magnetization vector of which is directed along the radius of the reactor chamber. The method and device provide a high lateral uniformity of plasma parameters in the processing zone of the plate and an increase in its density while reducing the electron temperature of the plasma and leveling its values along the radius of the reactor.
EFFECT: proposed approach makes it possible to create new and modernize existing wide-aperture plasma reactors with remote sources of highly ionized low-pressure plasma.
7 cl, 6 dwg
