METHOD OF MAKING HETEROGENEOUS p-n JUNCTION BASED ON ZINC OXIDE NANORODS Russian patent published in 2010 - IPC H01L21/18 B82B3/00 

FIELD: chemistry.

SUBSTANCE: method of making a heterogeneous p-n junction based on zinc oxide nanorods involves growing zinc oxide nanorods which are vertical and are interlocked with the base on a conducting doped silicon wafer through gas-phase deposition, with subsequent deposition of nickel oxide of the said nanorods until formation of a continuous layer on the tips of the nanorods. Nickel oxide is deposited on the zinc oxide nanorods at an angle to the horizontal axis of the zinc oxide nanorods which prevents deposition nickel oxide onto the base of the nanorods.

EFFECT: higher quality of p-n junction owing to high quality of the p-n junction based on compatible components in which there is no abridgement of the junction.

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