FIELD: physics.
SUBSTANCE: within the structure of heterogeneous p-n junction based on at least one zinc oxide nanobar of n-type conductivity and semiconductor film of p-type conductivity mounted on a substrate, semiconductor film is made of nickel oxide and is placed directly on substrate or on upper edges of nanobars.
EFFECT: technical result of invention is production of improved junction.
5 cl, 7 dwg
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