FIELD: physics.
SUBSTANCE: within the structure of heterogeneous p-n junction based on at least one zinc oxide nanobar of n-type conductivity and semiconductor film of p-type conductivity mounted on a substrate, semiconductor film is made of nickel oxide and is placed directly on substrate or on upper edges of nanobars.
EFFECT: technical result of invention is production of improved junction.
5 cl, 7 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MAKING HETEROGENEOUS p-n JUNCTION BASED ON ZINC OXIDE NANORODS | 2008 |
|
RU2396634C2 |
| METHOD OF MAKING A HETEROSTRUCTURE BASED ON AN ARRAY OF NANORODS OF ZINC OXIDE WITH A THIN SOLID SHELL OF TIN SULPHIDE | 2017 |
|
RU2723912C1 |
| HYBRID NANOCOMPOSITE MATERIALS | 2007 |
|
RU2462793C2 |
| METHOD FOR MANUFACTURING PHOTODETECTOR WITH LIMITED RANGE OF SPECTRAL SENSITIVITY BASED ON ARRAY OF ZINC OXIDE NANORODS | 2016 |
|
RU2641504C1 |
| THIN-FILM HYBRID PHOTOELECTRIC CONVERTER AND METHOD OF ITS MANUFACTURING | 2017 |
|
RU2694113C2 |
| METHOD FOR MANUFACTURING FRONT-SIDE TRANSPARENT COATINGS BASED ON AN ARRAY OF UNGROWN INDIVIDUAL ZINC OXIDE NANORODS | 2020 |
|
RU2762993C1 |
| METHOD OF MAKING SOLAR PHOTOELECTRIC CONVERTER | 2010 |
|
RU2437186C1 |
| PHOTOSENSITIVE DEVICE AND METHOD OF ITS MANUFACTURE | 2018 |
|
RU2685032C1 |
| RADIATION DETECTOR | 2012 |
|
RU2517802C1 |
| METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
