FIELD: nanotechnology.
SUBSTANCE: invention relates to optoelectronic devices, in particular to nanotechnologies of solar-blind near-ultraviolet radiation (NUVR) photodetectors based on 1D nanostructured zinc oxide. The method is carried out by using cathodic pulsed electrochemical deposition of water nitrate electrolyte at 55-65°C for 60 minutes on a high-conductive NUVR-transparent fixed substrate of array of base-fusing ZnO nanorods with an average length of 0.65 mcm and an average diameter of unfused sections near the upper ends of 0.30 mcm, subsequent thermal vacuum metallization at an angle to the vertical thin-filmed aluminium through the shadow aluminium mask of the upper ends of ZnO nanorods and high-conductive substrate surface outside their array, forming high-conductive epoxy contact layers on top of the metallised areas, glueing of flexible copper wire ends by epoxy high-conductive glue to the contact layers and annealing of this construction in air at 250°C for 300 s. This method for manufacturing a photodetector is easy to implement and allows to obtain a photodetector with a spectral sensitivity of about 532 at U=1 in the wavelength range of 365-370 nm, and with a cutoff time of 42 seconds, as well as with almost total absence of photosensitivity at λ>380 nm.
EFFECT: improving spectral sensitivity of solar-blind photodetector to near-ultraviolet radiation and reducing its cutoff time, simplifying the manufacture technology of such photodetector, reducing its energy consumption and increasing the level of environmental friendliness, excluding the need to use platinum, gold, palladium, indium, graphene in the structure elements of the specified device.
7 cl, 9 dwg
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Authors
Dates
2018-01-17—Published
2016-10-24—Filed