METHOD OF MAKING SEMICONDUCTOR DEVICE WITH T-SHAPED CONROL ELECTRODE Russian patent published in 2011 - IPC H01L21/338 B82B3/00 

FIELD: physics.

SUBSTANCE: method of making semiconductor device with a T-shaped control electrode involves selection of the active region of the device on a gallium arsenide substrate with deposition of an auxiliary dielectric layer, where the device is formed within the said active region. A resist layer which is suitable for nanoprint lithography is deposited on the said substrate and hot die-stamping is performed. An imprint is formed on the substrate with orientation [100] "explosive photolithography", where a set of photomasks which is a mirror of the working set, is used to form the imprint. After the "explosion" of the photoresist on the substrate, metal strips remain on the substrate, which lie at an angle 45±2 degrees relative the base section. The next operation is etching the substrate, after which rectangular projections, which form the relief of the imprint, are formed under the metal strips. After copying the said relief into the resist, plasma-chemical etching is performed, during which the dielectric layer is etched to the substrate at points corresponding to projections of the relief of the imprint. Further, the resist is removed and a photoresist layer is deposited. T-shaped control electrodes are formed via photolithography using the working set of photomasks.

EFFECT: shorter length of transistor channels, simplification and low cost of making devices and ICs based on said devices.