METHOD OF PREPARING TRANSPARENT OHMIC CONTACT STRUCTURE BeO/Au/BeO/p-GaN Russian patent published in 2010 - IPC H01L21/28 B82B3/00 

FIELD: physics.

SUBSTANCE: method of preparing a transparent ohmic contact structure BeO/Au/BeO/p-GaN involves ion-plasma cleaning of the surface of an epitaxial p-GaN layer and then heating the surface to temperature of 350-370°C and depositing an ohmic contact consisting of a BeO layer with p-type conductivity and thickness of 2.8-3.2 nm, a gold layer with thickness of 3.8-4.2 nm and a second BeO layer with thickness of 3.0-4.0 nm. After ion-plasma cleaning and before depositing the first BeO layer on the surface of the heated epitaxial p-GaN layer, an aluminium oxide layer with thickness of not less than 30% of the thickness of the epitaxial p-GaN layer is deposited and then removed.

EFFECT: minimisation of defects of the growth structure and increased stability of the said transparent contact structure.

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