METHOD OF MAKING PHOTOELECTRIC ELEMENT BASED ON GERMANIUM Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics; semiconductors.

SUBSTANCE: when making a photoelectric cell based on germanium, a dielectric film is deposited on the face of an n-type germanium monocrystalline substrate. Through chemical etching, windows are made in the dielectric film, corresponding to the topology of the p-n junction. The germanium surface layer is doped by diffusing zinc from the gaseous phase in a quasiclosed container into the windows. The p-n junction is removed from the back of the substrate. Back and front contacts are deposited and calcined. The structure is divided into separate photocells by etching and an antireflection coating is deposited.

EFFECT: simpler technology and increased efficiency of the process of making germanium photocells with high photocurrent value.

10 cl, 3 dwg, 1 ex