METHOD FOR MANUFACTURING A HIGH-CURRENT TRANSISTOR WITH NON-WALL OHMIC CONTACTS Russian patent published in 2023 - IPC H01L29/778 

FIELD: transistors.

SUBSTANCE: powerful high-frequency field-effect transistors based on gallium nitride. Objective of the present invention is to reduce the contact resistance of the ohmic contacts of the source and drain. The proposed method is as follows. A buffer layer is grown on the substrate using epitaxy. A channel layer is grown on the surface of the buffer layer using epitaxy. On the surface of the channel layer, an AlN spacer layer 1–2 nm thick is grown by epitaxy. On the surface of the spacer layer, a contact layer of a highly alloyed solid solution Al_xGa_1-xN is epitaxially grown, where 0.15≤x≤0.4. After that, in the channel area, the Al_xGa_1-xN contact layer is etched along the mask to the AlN spacer layer. On the open part of the spacer layer in the channel area, a local epitaxial epitaxial growth of the AlN barrier layer is carried out. On the remaining parts of the highly alloyed Al_xGa_1-xN contact layer, ohmic drain and source contacts are deposited. A metal gate contact is fabricated on the AlN barrier layer.

EFFECT: reduced contact resistance of the ohmic contacts of the source and drain.

1 cl, 4 dwg