METHOD FOR PRODUCING OHMIC CONTACT WITH LOW SPECIFIC RESISTANCE TO PASSIVATED GALLIUM NITRIDE HETEROSTRUCTURE ON SILICONE SUBSTRATE Russian patent published in 2021 - IPC H01L21/28 H01L21/02 

FIELD: physics.

SUBSTANCE: invention relates to a technology for manufacturing high-power and microwave gallium nitride transistors on a silicon substrate and integrated circuits based on them, and in particular to a technology for manufacturing ohmic contacts with low resistivity and smooth morphology to a passivated gallium nitride heterostructure. After placing the samples in the working chamber and reaching the working pressure, the passivated surface of the device heterostructure is treated with an argon ion source to remove contaminants that have arisen during the interoperative period. Then, Si / Ti / Al / Ni / Au layers with thicknesses of 10-20 / 20/100/40/60 nm are successively deposited on the passivating dielectric by the method of electron-beam evaporation, respectively. Then the contact undergoes heat treatment in a helium atmosphere at a temperature of 850°C for 30 s.

EFFECT: creation of an ohmic contact with low resistivity and smooth morphology to a passivated GaN / AlGaN heterostructure on a silicon substrate.

1 cl, 4 dwg