SEMICONDUCTOR INTEGRATED CIRCUIT (VERSIONS) Russian patent published in 2010 - IPC H01L27/04 

FIELD: physics.

SUBSTANCE: invention relates to design and technology of manufacturing semiconductor integrated circuits (IC) and can be used in digital, analogue and memory units in microelectronics. The semiconductor IC has a high-resistance monocrystalline silicon layer grown in form of a hollow cylinder in which there are regions with different conduction type, which form bipolar transistors, resistors and capacitors. On the outer surface of the high-resistance monocrystalline silicon layer there are emitter and base contacts adjacent to corresponding regions of corresponding transistors connected to resistors and capacitors by conductive paths formed on the surface of a dielectric placed on the outer surface of the high-resistance monocrystalline silicon layer, and on the inner surface of the high-resistance monocrystalline silicon layer there is a collector contact in form of a hollow cylinder adjacent to the collector regions of the transistors or the adjacent silicon layer.

EFFECT: higher degree of integration of the IC, reduced feature size of the element, lower level of inter-electrode connections, reduction of power consumption by one switching, increased reliability.

3 cl, 1 dwg