BIPOLAR TRANSISTOR Russian patent published in 2001 - IPC

FIELD: electronics. SUBSTANCE: invention specifically refers to design and manufacture of bipolar semiconductor transistors, in circuits of amplification, generation and conversion of electromagnetic oscillations to other oscillations. In proposed bipolar transistor monocrystalline silicon layer of p type is grown in the form of hollow cylinder on which inner surface metal collector contact in the form of two cylindrical layers made of different non-magnetic materials is formed. Monocrystalline silicon collector layer of n type, monocrystalline silicon base layer of p type, monocrystalline silicon emitter layer of n type are formed on outer surface of above-mentioned layer and emitter contact coming in the form of two cylindrical layers made of different non-magnetic metals is deposited on surface of emitter layer. Metal base contact in the form of symmetric pair of contacts each including two cylindrical layers made of different non-magnetic metals is formed on surface of monocrystalline silicon base layer of p type. Conductivity of upper cylindrical layer in each contact is greater than conductivity of lower cylindrical layer of metal in direction of flow of electric current. EFFECT: prevention of edge effect, break-down voltage increased to rated value, reduced level of electric heat and magnetic heat degradation, raised stability of electric parameters of bipolar transistors and their functional reliability. 1 cl, 1 dwg