SUPER HIGH FREQUENCY BIPOLAR p-n-p TRANSISTOR Russian patent published in 2013 - IPC H01L29/737 

FIELD: electrical engineering.

SUBSTANCE: super high frequency bipolar p-n-p transistor contains a collector region based on p⁺-type monocrystal silicon substrate, an epitaxial p-type silicon layer, a diffusion thin n-region, a diffusion p⁺-type emitter region and metal contacts to the active regions; implemented in the transistor is a p-n-p UHF transistor structure where the collector and the basic regions are made of gallium and arsenic compounds based on the collector p⁺ monocrystal substrate, the collector in-series epitaxial p⁺-p-p-type layers, the epitaxial i-layer with conductivity close to proper, n-type, n-type thin epitaxial layers of the basic region while the emitter region is made of an in-series heterophase epitaxial p-p⁺-type emitter based on aluminium, gallium and arsenic compounds.

EFFECT: sharp increase of operational voltages, operational currents and power output; increase of limit frequency, current-amplification factor and safe operation region in static and dynamic modes.

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