FIELD: chemistry.
SUBSTANCE: invention can be used in production of semiconductors and in microelectronics. Grinding powder which contains silicon carbide, silicon oxide, silicon and metallic impurities is treated with organic solutions and/or dried. The powder is then treated with bromoform and/or dibromomethane in airtight conditions at pressure over 0.2 atm with mechanical agitation. Silicon carbide separated as a heavy fraction contains 95-98% of the main product, while the initial treated powder contains 3-55 wt % silicon carbide.
EFFECT: improved properties of the grinding powder.
3 cl
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