FIELD: chemistry.
SUBSTANCE: invention relates to ammonium compositions comprising, at least, one hydroxo-zinc compound and, at least, two compounds of the elements of the 3-rd main subgroup. The said composition can be used to make electronic components and to obtain a layer applied to a substrate followed by the thermal conversion.
EFFECT: high electron mobility of electrons, favourable hysteresis and unlocking voltage.
14 cl, 1 tbl, 3 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF OBTAINING METAL OXIDE-CONTAINING LAYERS | 2010 |
|
RU2553151C2 |
| INDIUM OXOALKOXIDES FOR OBTAINING INDIUM OXIDE-CONTAINING LAYERS | 2011 |
|
RU2572784C2 |
| INDIUM OXOALKOXIDES FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS | 2011 |
|
RU2570201C9 |
| METHOD OF PRODUCING HIGHLY EFFICIENT AND ELECTRICALLY STABLE SEMICONDUCTOR LAYERS OF METAL OXIDES, LAYERS MADE USING THIS METHOD, AND USE THEREOF | 2012 |
|
RU2601210C2 |
| COATING LIQUID FOR FORMING THIN METAL OXIDE FILM, THIN METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING FIELD-EFFECT TRANSISTOR | 2011 |
|
RU2546725C2 |
| METHOD OF PRODUCING INDIUM CHLORODIALKOXIDES | 2010 |
|
RU2541539C2 |
| FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2017 |
|
RU2702802C1 |
| PROCESS FOR PREPARING INDIUM ALKOXIDE COMPOUNDS, INDIUM ALKOXIDE COMPOUNDS PREPARED BY PROCESS AND USE THEREOF | 2014 |
|
RU2656103C2 |
| P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING R-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2014 |
|
RU2660407C2 |
| HYBRID NANOCOMPOSITE MATERIALS | 2007 |
|
RU2462793C2 |
