FIELD: chemistry.
SUBSTANCE: method relates to nanotechnology of layered materials and is meant for obtaining nanosized carbon layers on non-conducting substrates for mass production of devices using planar technology. The method of obtaining a carbon layer on a non-conducting substrate involves oxidation of a graphite substrate through fluorination under conditions which provide dielectric properties of the substrate. An intercalation compound based on graphite fluoride C2FX with x≤1 is obtained, wherein the introduced component can be substituted. Fluorine-oxidising agent is used: BrF3 vapour or BrF3 solution to Br2. Fluorine atoms are then removed from the surface layer of the required thickness of 1-4 nm under conditions which facilitate formation of a carbon layer of controlled thickness on the dielectric substrate. Defluorination is carried out via chemical reduction in water vapour or hydrasine hydrate vapour or through exposure to ionising particles - electron beam. Due to the purely chemical and/or radiation-chemical nature of the main operations, as well as initiation of formation of the carbon layer during defluorination from the surface with distribution deep into the substrate, with achievement of the required thickness of the formed carbon layer through chemical reduction conditions - concentration and temperature of the vapour of reagents and in case of reduction with an electron beam - kinetic energy of electrons, increase in the area of the solid carbon layer and possibility of controlling its thickness are achieved.
EFFECT: increased area of the solid carbon layer and possibility of controlling its thickness.
11 cl, 4 dwg, 5 ex
Title | Year | Author | Number |
---|---|---|---|
ENVIRONMENTALLY SAFE METHOD OF PRODUCING CARBON SORBENT | 2015 |
|
RU2601762C1 |
METHOD OF ACTIVE LAYER PRODUCING FOR RESISTIVE MEMORY | 2015 |
|
RU2603160C2 |
METHOD OF OBTAINING PERFORATED GRAPHENE-BASED LAYERED COMPOUNDS | 2011 |
|
RU2478079C2 |
METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD | 2010 |
|
RU2420828C1 |
FLASH MEMORY ELEMENT FOR ELECTRICALLY REPROGRAMMABLE READ-ONLY MEMORY | 2009 |
|
RU2403631C1 |
METHOD OF PRODUCTION OF FLUOROGRAPHENE LAYER | 2012 |
|
RU2511613C1 |
METHOD OF PRODUCING GRAPHENE NANO-RIBON FET | 2009 |
|
RU2400858C1 |
METHOD OF MANUFACTURE OF SUSPENSION FOR 2D PRINTING OF DIELECTRIC LAYERS BASED ON FLUOROGRAPHEN | 2016 |
|
RU2620123C1 |
CARBON SORBENT FABRICATION PROCESS | 2006 |
|
RU2317852C1 |
METHOD FOR PRODUCING OF MIS STRUCTURES ON BASIS OF InAs | 2015 |
|
RU2611690C1 |
Authors
Dates
2010-11-10—Published
2009-09-17—Filed