FIELD: electricity.
SUBSTANCE: method involves notching in bulk of a silicon wafer and silicone removing from the wafer back to uncover notch bottoms. Notching enables silicone pattern formation to represent hollow cell walls that is followed with wall-through oxidation to form a dielectric SiO2 conduit system. Silicon removing from the back of the wafer can be conducted by the deep plasma etch process.
EFFECT: high strength of the insulating element which can be used for manufacturing various MEMS devices in bulk of a standard silicon wafer.
2 cl, 13 dwg
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