METHOD FOR COMPENSATING FOR INHOMOGENEITY OF THE ETCHING OF SILICON JUMPERS OVER CHIP (OPTIONS) AND SILICON WAFER WITH DISTRIBUTION OF CHIPS ACCORDING TO THIS METHOD (OPTIONS) Russian patent published in 2021 - IPC H01L21/3065 

FIELD: microelectronic engineering.

SUBSTANCE: invention relates to the field of microelectronic engineering. A silicon wafer for the manufacture of microelectromechanical systems is a round-shaped disk of silicon, on which, by applying a mask, regions to be etched by plasma are organized for the location of a chip in each of them, the chip is made with at least two sections separated by jumpers. In this case, the sections of the chip separated by jumpers are located on the disc from the side of etching at the same distance from the geometric center of the disc.

EFFECT: present invention is aimed at achieving a technical result consisting in reducing the local spread of critical dimensions (thickness and / or depth of jumpers between regions in a chip or between chips in one region of their etching) during the process of plasma-chemical etching.

6 cl, 8 dwg