METHOD FOR MANUFACTURING SENSITIVE ELEMENTS OF MEMS SENSORS Russian patent published in 2021 - IPC H01L21/306 B81C1/00 

FIELD: sensitive elements manufacturing.

SUBSTANCE: invention relates to methods for manufacturing sensitive elements of MEMS sensors, in particular to manufacturing methods combining bulk etching of a SOI structure with micromechanical processing. A method for manufacturing sensitive elements of MEMS sensors on a SOI structure includes applying protective coatings on the front side of the plate, photolithography along the protective layer from the front side, deep high-precision etching of silicon from the front side to the insulating dielectric layer with a given profile and roughness, removing the masking coating residues from the front side, while before etching the insulating dielectric layer, a scribing operation is performed to the insulating dielectric layer on the back side of the SOI structure.

EFFECT: invention allows reducing and simplify the technological process of manufacturing sensitive elements of MEMS sensors on the SOI structure by reducing the number of technological operations.

1 cl, 4 dwg