FIELD: instrument engineering.
SUBSTANCE: invention relates to the field of instrumentation and can be used in the manufacture of silicon crystals of micromechanical devices, such as accelerometers, gyroscopes, angular velocity sensors. Method includes making grooves in the volume of the silicon wafer to form silicon structures in the form of walls. Oxidize the walls, remove silicon from the back of the silicon wafer to open the bottom of the grooves. In this case, removal of silicon from the back side of the silicon wafer is carried out after the grooves are made, after which the walls of the silicon structures are oxidized and the silicon oxide is completely depleted. Removal of silicon from the back of the plate can be carried out by the method of deep plasma etching.
EFFECT: invention provides an increase in the sensitivity of micromechanical sensors by eliminating the concentrators of mechanical stresses from the walls of the silicon structures formed.
1 cl, 4 dwg
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