FIELD: chemistry.
SUBSTANCE: method involves evacuation and treating substrates in oxygen-containing plasma. Substrates are treated in a plasma mixture of oxygen and inert gas containing 5-12 vol. % oxygen and 88-95 vol. % inert gas. The inert gas is helium, neon or argon and treatment is carried out at temperature in the reaction chamber equal to 80-140 Pa, radio-frequency power equal to 0.02-0.06 W/cm3 and exposure time of 3-15 minutes.
EFFECT: invention improves electrophysical parametres of piezoelectric devices owing to more complete removal of organic residue from piezoelectric substrates after different processes.
3 ex
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Authors
Dates
2010-12-20—Published
2008-10-13—Filed