FIELD: physics.
SUBSTANCE: invention can be used in microelectronics of integrated piezoelectric devices on surface acoustic waves (filters, delay lines, resonators). According to the method, a substrate with photoresist is put into a plasmochemical reactor inside a perforated metal cylinder and treated in plasma of a mixture of oxygen and inert gas with oxygen content of 5-15 vol. % and inert gas content of 85-95 vol. %, at pressure inside the reactor of 80-150 Pa, radio-frequency power density of 0.03-0.07 W/cm3 and treatment time of 20-210 seconds. The inert gas used is helium, neon or argon.
EFFECT: increased accuracy and purity of after-development of photoresist on piezoelectric substrates.
1 tbl, 3 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF FURTHER DEVELOPMENT OF PHOTORESIST ON PIEZOELECTRIC SUBSTRATES | 2009 |
|
RU2416676C1 |
| METHOD OF REMOVING ORGANIC RESIDUE FROM PIEZOELECTRIC SUBSTRATES | 2008 |
|
RU2406785C2 |
| METHOD OF MAKING SURFACE ACOUSTIC WAVE RESONATORS | 2012 |
|
RU2494499C1 |
| ELECTRON CYCLOTRON RESONANCE -PLASMA SOURCE TO PROCESS SEMICONDUCTOR STRUCTURES, METHOD TO PROCESS SEMICONDUCTOR STRUCTURES, PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS ( VARIANTS ), SEMICONDUCTOR DEVICE OR INTEGRATED CIRCUIT ( VARIANTS ) | 2003 |
|
RU2216818C1 |
| MANUFACTURING PROCESS FOR DOUBLE-LEVEL METALLIZED LARGE-SCALE INTEGRATED CIRCUITS | 1991 |
|
RU2022407C1 |
| PROCESS OF PLASMA CHEMICAL REMOVAL OF FILMS OF PHOTORESIST | 1989 |
|
RU1653484C |
| PROCESS OF PLASMA ETCHING OF CONTACT WINDOWS IN INSULATING AND PASSIVATING LAYERS OF DIELECTRIC BASED ON SILICON | 1992 |
|
RU2024991C1 |
| PROCESS OF PLASMA-CHEMICAL PRECIPITATION OF FILMS OF PHOSPHOROUS-SODA-LIME GLASS | 1991 |
|
SU1795829A1 |
| PROCESS OF MANUFACTURE OF TWO-LEVEL COATING | 1991 |
|
RU2025825C1 |
| PLASMO-CHEMICAL LOW-PRESSURE REACTOR FOR ETCHING AND DEPOSITING MATERIALS | 2005 |
|
RU2293796C2 |
