FIELD: radio engineering, communication.
SUBSTANCE: method of making surface acoustic wave resonators involves etching a quartz substrate, depositing a metal coating on the substrate, making resonator structures, mounting resonators in a housing and dry treatment in two steps, the first step involving removal of organic residues from the surface of the resonators in the plasma of a mixture of oxygen and an inert gas, the inert gas used being either helium, neon or argon, with high-frequency power density of 0.02-0.08 W/cm3 and pressure of 80-150 Pa, oxygen content of 3-15 vol. %, inert gas content of 85-97 vol. %, and the second step involving tuning the frequency of the resonators by reactive ion-beam etching in a fluorine-containing discharge.
EFFECT: longer frequency stability of surface acoustic wave resonators owing to removal of organic residues from the resonators and higher degree of purity by adding an inert gas into oxygen plasma and by tuning frequency of the resonators via reactive ion-beam etching in a fluorine-containing discharge.
3 ex, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF TUNING RESONATOR ON SURFACE ACOUSTIC WAVES | 2011 |
|
RU2452079C1 |
METHOD OF REMOVING ORGANIC RESIDUE FROM PIEZOELECTRIC SUBSTRATES | 2008 |
|
RU2406785C2 |
METHOD FOR AFTER-DEVELOPMENT OF PHOTORESIST DEPOSITED ON PIEZOELECTRIC SUBSTRATE | 2008 |
|
RU2401321C2 |
METHOD OF FURTHER DEVELOPMENT OF PHOTORESIST ON PIEZOELECTRIC SUBSTRATES | 2009 |
|
RU2416676C1 |
ELECTRON CYCLOTRON RESONANCE -PLASMA SOURCE TO PROCESS SEMICONDUCTOR STRUCTURES, METHOD TO PROCESS SEMICONDUCTOR STRUCTURES, PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS ( VARIANTS ), SEMICONDUCTOR DEVICE OR INTEGRATED CIRCUIT ( VARIANTS ) | 2003 |
|
RU2216818C1 |
PROCESS OF SELECTIVE ETCHING OF SILICON-CONTAINING LAYER IN MULTILAYER STRUCTURES | 0 |
|
SU1819356A3 |
METHOD OF GLASS CERAMIC SUBSTRATES CLEANING IN THE LOW PRESSURE HIGH-FREQUENCY PLASMA JET | 2017 |
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RU2649695C1 |
METHOD FOR TUNING NARROW-BAND ACOUSTIC-SURFACE- WAVE DEVICE TO CENTER FREQUENCY | 1999 |
|
RU2157587C1 |
PROCESS OF MANUFACTURE OF TWO-LEVEL COATING | 1991 |
|
RU2025825C1 |
PROCESS PLANATION OF INTEGRATED CIRCUITS | 1992 |
|
RU2024992C1 |
Authors
Dates
2013-09-27—Published
2012-02-09—Filed