FIELD: electricity.
SUBSTANCE: method involves the location of substrates with applied photoresist layer in plasma-chemical reactor and treatment of photoresist layer in oxygen-containing medium. Note that substrates are located in plasma-chemical reactor at substrate holder. Photoresist further development is performed simultaneously on all substrates located in plasma mixture of oxygen and inert gas, where as inert gas helium or neon or argon is used. Note that oxygen content is within 5-15 vol %, and inert gas - within 85-95 vol %. The pressure in reaction chamber is 80-150 Pa, density of radio-frequency power is within 0.02-0.04 W/cm3 and treatment time within 40-300 seconds.
EFFECT: increase of productivity and yield ratio owing to improvement of treatment degree during further development of photoresist on piezoelectric substrates by adding inert gas to gaseous discharge.
1 tbl, 3 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR AFTER-DEVELOPMENT OF PHOTORESIST DEPOSITED ON PIEZOELECTRIC SUBSTRATE | 2008 |
|
RU2401321C2 |
| METHOD OF REMOVING ORGANIC RESIDUE FROM PIEZOELECTRIC SUBSTRATES | 2008 |
|
RU2406785C2 |
| METHOD OF MAKING SURFACE ACOUSTIC WAVE RESONATORS | 2012 |
|
RU2494499C1 |
| PROCESS OF PLASMA CHEMICAL REMOVAL OF FILMS OF PHOTORESIST | 1989 |
|
RU1653484C |
| MANUFACTURING PROCESS FOR DOUBLE-LEVEL METALLIZED LARGE-SCALE INTEGRATED CIRCUITS | 1991 |
|
RU2022407C1 |
| COMPOSITION OF GAS MIXTURE TO FORM TANTALUM NITRIDE METAL GATE BY PLASMA ETCH CHEMISTRY | 2010 |
|
RU2450385C1 |
| DEVICE FOR PLASMA-CHEMICAL TREATMENT OF SEMICONDUCTOR WAFERS | 2003 |
|
RU2249883C1 |
| PROCESS OF PLASMA ETCHING OF CONTACT WINDOWS IN INSULATING AND PASSIVATING LAYERS OF DIELECTRIC BASED ON SILICON | 1992 |
|
RU2024991C1 |
| PLASMO-CHEMICAL LOW-PRESSURE REACTOR FOR ETCHING AND DEPOSITING MATERIALS | 2005 |
|
RU2293796C2 |
| PROCESS OF SELECTIVE ETCHING OF SILICON-CONTAINING LAYER IN MULTILAYER STRUCTURES | 0 |
|
SU1819356A3 |
