SHF ATTENUATOR Russian patent published in 2008 - IPC H01P1/22 

FIELD: electricity.

SUBSTANCE: SHF attenuator consists of one digit, each of which contains resistors, one of which is series connected and another one is parallel connected to transmission lines on input and output of attenuator, field-effect transistor with Schottky barrier. Series resistor is connected between input and output transmission lines, control gate with Schottky barrier is connected to DC voltage drive source, and its source is grounded. Each digit of attenuator contains one field-effect transistor with Schottky barrier and one parallel resistor. Each digit of attenuator additionally contains two segments of transmission line. Each segment of transmission line of length equal to one quarter of wave length in transmission line is arranged on both sides and symmetrically relative to series resistor and connected to on input, or on output, and the second ends of segments of lines of transmission line transfer are interconnected and connected to one ends of parallel resistor and to sink of field-effect transistor with Schottky barrier. The other end of parallel resistor is grounded.

EFFECT: design simplification and downsising and weight reduction of SHF attenuator, enhancement of SHF attenuator.

3 dwg, 1 ex