MICROWAVE SIGNAL INTEGRATED ATTENUATOR Russian patent published in 2010 - IPC H01P1/00 

Abstract RU 2408114 C1

FIELD: physics.

SUBSTANCE: invention can be used in integrated microwave electronics for ground-, air- and space-based equipment; when designing fixed and analogue attenuators of microwave signals, balancing channels of electronic equipment, matching impedances of interstage microwave circuits, electronic antennae of switches, automated radio control systems controlled by a computer or a microcontroller, pulse modulators, as well as in generating signals with composite types of modulation. The attenuator uses a membrane made from a diamond film as a control element. Thickness of the film is between 30 and 500 nm. A microstrip line is made from nickel and has thickness between 10 and 100 nm. The attenuator also has a UV radiation source which is directed from the side of the substrate through a hole in the substrate perpendicular the surface of the diamond film. A microwave signal cannot pass from the input to the output of the microstrip line.

EFFECT: improved functional characteristics, wider dynamic range of controlling signal power, high-speed operation, reduced loss and overall dimensions.

1 dwg, 1 tbl, 5 ex

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RU 2 408 114 C1

Authors

Afanas'Ev Mikhail Sergeevich

Il'In Evgenij Mikhajlovich

Dates

2010-12-27Published

2010-02-03Filed