METHOD FOR MANUFACTURING THIN-FILM STRUCTURE OF MICROWAVE HYBRID INTEGRATED CIRCUIT Russian patent published in 2007 - IPC H01L39/24 H01L21/02 

FIELD: thin-film technology; hybrid integrated-circuit manufacture.

SUBSTANCE: proposed method for manufacturing microwave hybrid integrated circuit characterized in high-quality insulation of its circuit components, reduced probability of failure due to probable shorts at intersection points of image components and pendant wiring conductors and premature degradation of physical and chemical properties of current-carrying tracks, enhanced intervals between layout components at reduced gaps between its components includes creation of image of passive and switching components on substrate surface which are then covered with polyamide insulating layer by way of centrifuging interrupted to provide for certain time interval prior to reducing fluidity of polyamide varnish as it starts drying; during this time interval integrated circuit is held under condition of mentioned varnish spreading throughout entire surface of layout image of mentioned components including their side surface; clearances between component are filled up, and polyamide varnish is dried out. Then, while preparing integrated circuit to wiring of pendant components and conductors, double-layer shielding and insulating coating is formed on image surface at points of intersection of these components in the form of specially saved insulating layer combining functions of additional insulating layer preventing premature degradation of physical and chemical properties of image components and enhancing their insulation and contrast layer designed to improve optical-vision quality control by way of mentioned polyamide varnish photolithography using positive photoresist, as well as auxiliary positive photoresist layer on polyamide varnish insulating layer applied to surface of image components; both layers of this insulating coating are jointly subjected to thermal strengthening; mentioned layers are applied while forming double-layer shielding and insulating coating at the same time saving total thickness complying with main electrophysical parameters of integrated circuit affording admissible microwave mode of its operation.

EFFECT: facilitated manufacture, enlarged functional capabilities.

2 cl, 1 dwg