METHOD OF PRODUCING NANOCRYSTALLINE SILICON HAVING STABLE, BRIGHT PHOTOLUMINESCENCE Russian patent published in 2011 - IPC H01L33/02 B82B3/00 

FIELD: physics.

SUBSTANCE: disclosed method of producing nanocrystalline silicon involves a sintering reaction at temperature of approximately 800 K of finely ground magnesium silicide and aerosil with subsequent dissolving and washing off magnesium oxide in an acidified aqueous solution and then cleaning nanocrystalline silicon by depositing ethanol and dissolving in trichloromethane. The invention enables to obtain nanocrystallin silicon, having stable, bright luminescence, maximum intensity of which can be shifted to the 750-550 nm range, and also enables to obtain nanocrystalline silicon particles which retain luminescence properties at high temperatures of up to 650 K in bulk without using expensive and highly flammable substances.

EFFECT: stable, bright photoluminescence of silicon in the visible spectral region in bulk, which facilitates use of this material in medicine and biology for fluorescent diagnosis, photodynamic and photothermal therapy, photochemical sterilisation of blood banks, as well as in ecology for purifying water from organic contaminants and pathological microflora.

2 dwg