METHOD OF PRODUCTION OF POWDERS OF POROUS SILICON Russian patent published in 2015 - IPC C30B29/06 C01B33/02 C25B1/00 C25D11/32 B82B3/00 B82Y5/00 A61K9/14 

FIELD: nanotechnology.

SUBSTANCE: nanoscale silicon powder is produced by etching of single crystal silicon in a cell of electrochemical etching with a U-shaped stainless steel counterelectrode with subsequent mechanical separation of the porous layer from the substrate, its grinding in isopropyl alcohol in an ultrasonic bath and drying in vivo, at that the electrolyte is used as a solution of dimethylformamide with the addition of hydrofluoric acid and 20% by volume of hydrogen peroxide (30%).

EFFECT: increase in the rate of etching of single crystal silicon.

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