METHOD OF OBTAINING POWDER OF POROUS SILICON Russian patent published in 2015 - IPC C01B33/21 B82B3/00 

Abstract RU 2572128 C1

FIELD: nanotechnology.

SUBSTANCE: obtaining nanoscale silicon powder is provided by etching of single crystal silicon in a cell of electrochemical etching with a U-shaped stainless steel counterelectrode with subsequent mechanical separation of the porous layer from the substrate, its grinding in isopropyl alcohol in an ultrasonic bath, and drying in vivo, at that electrolyte is used as dimethylformamide solution with the addition of hydrofluoric acid and 20% by volume of 30% hydrogen peroxide.

EFFECT: increase in the rate of etching of single crystal silicon.

2 dwg

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RU 2 572 128 C1

Authors

Len'Shin Aleksandr Sergeevich

Kashkarov Vladimir Mikhajlovich

Seredin Pavel Vladimirovich

Dates

2015-12-27Published

2014-07-29Filed